Search for: All records

Creators/Authors contains: "Ermolaev, Maksim"

« Prev Next »

Total Resources

3

Resource Type
Conference Paper

0

Conference Proceeding

0

Dataset

0

Journal Article

3

Workshop Report

0

Availability
Full Text / Resource Available

2

Citation Only

1

Save Results
Excel (limit 2000)
CSV (limit 5000)
XML (limit 5000)

Have feedback or suggestions for a way to improve these results?
!

Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher. Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?

Some links on this page may take you to non-federal websites. Their policies may differ from this site.

g -factor engineering with InAsSb alloys toward zero band gap limit

https://doi.org/10.1103/PhysRevB.108.L121201

Jiang, Yuxuan ; Ermolaev, Maksim ; Moon, Seongphill ; Kipshidze, Gela ; Belenky, Gregory ; Svensson, Stefan ; Ozerov, Mykhaylo ; Smirnov, Dmitry ; Jiang, Zhigang ; Suchalkin, Sergey ( September 2023 , Physical Review B)
Giant g-factors and fully spin-polarized states in metamorphic short-period InAsSb/InSb superlattices

https://doi.org/10.1038/s41467-022-33560-x

Jiang, Yuxuan ; Ermolaev, Maksim ; Kipshidze, Gela ; Moon, Seongphill ; Ozerov, Mykhaylo ; Smirnov, Dmitry ; Jiang, Zhigang ; Suchalkin, Sergey ( October 2022 , Nature Communications)

Abstract
Realizing a large Landég-factor of electrons in solid-state materials has long been thought of as a rewarding task as it can trigger abundant immediate applications in spintronics and quantum computing. Here, by using metamorphic InAsSb/InSb superlattices (SLs), we demonstrate an unprecedented high value ofg≈ 104, twice larger than that in bulk InSb, and fully spin-polarized states at low magnetic fields. In addition, we show that theg-factor can be tuned on demand from 20 to 110 via varying the SL period. The key ingredients of such a wide tunability are the wavefunction mixing and overlap between the electron and hole states, which have drawn little attention in prior studies. Our work not only establishes metamorphic InAsSb/InSb as a promising and competitive material platform for future quantum devices but also provides a new route towardg-factor engineering in semiconductor structures.

more » « less
Dirac energy spectrum and inverted bandgap in metamorphic InAsSb/InSb superlattices

https://doi.org/10.1063/1.5128634

Suchalkin, Sergey ; Ermolaev, Maksim ; Valla, Tonica ; Kipshidze, Gela ; Smirnov, Dmitry ; Moon, Seongphill ; Ozerov, Mykhaylo ; Jiang, Zhigang ; Jiang, Yuxuan ; Svensson, Stefan P. ; et al ( January 2020 , Applied Physics Letters)

Full Text Available